inchange semiconductor isc product specification isc silicon pnp darlington power transistor 2SB880 description high dc current gain- : h fe = 2000(min)@ i c = - 2a wide area of safe operation low collector-emitter saturation voltage- : v ce(sat) = -1.5v(max)@ i c = - 2a complement to type 2sd1190 applications designed for motor drivers, printer hammer drivers, relay drivers, voltage regulators applications. absolute maximum ratings (ta=25 ) symbol parameter value unit v cbo collector-base voltage -70 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -6 v i c collector current-continuous -4 a i cm collector current-peak -6 a collector power dissipation t c =25 30 p c collector power dissipation t a =25 1.75 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlington power transistor 2SB880 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = -50ma, r be = -60 v v (br)cbo collector-base breakdown voltage i c = -5ma, i e = 0 -70 v v ce( sat ) collector-emitter saturation voltage i c = -2a, i b = -4ma b -1.5 v v be( sat ) base-emitter saturation voltage i c = -2a, i b = -4ma b -2.0 v i cbo collector cutoff current v cb = -40v, i e = 0 -100 a i ebo emitter cutoff current v eb = -5v; i c = 0 -3 ma h fe dc current gain i c = -2a; v ce = -2v 2000 f t current-gain?bandwidth product i c = -2a; v ce = -5v 20 mhz switching times t on turn-on time 0.5 s t stg storage time 1.4 s t f fall time r l = 10 , v cc -20v i c = -2a; i b1 = -i b2 = -4ma 1.2 s isc website www.iscsemi.cn
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